MBRS260T3G — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MBRS260T3G: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_width: 3.56 MILLIMETERS NOMINAL MM, overall_height: 2.30 MILLIMETERS NOMINAL MM, overall_length: 5.44 MILLIMETERS NOMINAL MM, mounting_method: TERMINAL, features_provided: ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-688-9406, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MBRS260T3G

NSN: 5961-01-688-9406
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_width	3.56 MILLIMETERS NOMINAL MM
overall_height	2.30 MILLIMETERS NOMINAL MM
overall_length	5.44 MILLIMETERS NOMINAL MM
mounting_method	TERMINAL
features_provided	ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE
end_item_identification	5840-01-669-5071
mounting_facility_quantity	2
terminal_type_and_quantity	2 CLAMP
function_for_which_designed	RECTIFIER AND SWITCHING
current_rating_per_characteristic	2.0 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 60.0 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
part_name_assigned_by_controlling_agency	SURFACE MOUNT, POWER RECTIFIER
NSN	5961-01-688-9406

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: 403A A

•

MOUNTING METHOD: TERMINAL

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	2.30 MILLIMETERS NOMINAL MM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	403A A
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	5.44 MILLIMETERS NOMINAL MM
OVERALL WIDTH	3.56 MILLIMETERS NOMINAL MM
FEATURES PROVIDED	ROHS DIRECTIVE COMPLIANCE AND ELECTROSTATIC SENSITIVE
CURRENT RATING PER CHARACTERISTIC	2.0 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 60.0 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MBRS260T3G?

MBRS260T3G is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for MBRS260T3G?

MBRS260T3G is cataloged in the U.S. Government catalog under NSN 5961-01-688-9406. This indicates validated use in U.S. government and defense supply chains.

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MBRS260T3G — SEMICONDUCTOR DEVICE,DIODE

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