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MBRS1100 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

MBRS1100: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON, mounting_method: SURFACE, special_features: PLASTIC CASE; STABLE OXIDE PASSIVATED JUNCTION, terminal_type_and_quantity: 2 WIRE LEAD, absolute_maximum_current_rating_per_characteristic: 1.00 AMPERES FORWARD CURRENT, AVERAGE, absolute_maximum_voltage_rating_in_volts_per_characteristic: 100.0 REPETITIVE PEAK REVERSE VOLTAGE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-453-8816, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MBRS1100
NSN: 5961-01-453-8816
NIINs: 014538816, 016607559
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)
SPECIFICATIONS
materialSILICON
mounting_methodSURFACE
special_featuresPLASTIC CASE; STABLE OXIDE PASSIVATED JUNCTION
terminal_type_and_quantity2 WIRE LEAD
absolute_maximum_current_rating_per_characteristic1.00 AMPERES FORWARD CURRENT, AVERAGE
absolute_maximum_voltage_rating_in_volts_per_characteristic100.0 REPETITIVE PEAK REVERSE VOLTAGE
NSN5961-01-453-8816
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN MBRS1100 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
MOUNTING METHOD: SURFACE
•
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE
•
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
•
MATERIAL: SILICON
•
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
TECHNICAL CHARACTERISTICS
MOUNTING METHODSURFACE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC1.00 AMPERES FORWARD CURRENT, AVERAGE
SPECIAL FEATURESPLASTIC CASE; STABLE OXIDE PASSIVATED JUNCTION
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIALSILICON
TERMINAL TYPE AND QUANTITY2 WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 3
MBRS1100T3Reference document
Same NSN cross-reference
Reference document — Design control — primary reference
356A1451P70Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
91754500Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is MBRS1100?
MBRS1100 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace MBRS1100?
There are 3 known substitutes for MBRS1100: MBRS1100T3, 356A1451P70, 91754500. Substitute compatibility should be verified for your specific system.
What is the NSN for MBRS1100?
MBRS1100 is cataloged in the U.S. Government catalog under NSN 5961-01-453-8816. This indicates validated use in U.S. government and defense supply chains.
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