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MBRA130LT3G — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

MBRA130LT3G: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_width: 0.103 INCHES NOMINAL IN, overall_height: 0.083 INCHES NOMINAL IN, overall_length: 0.205 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: SURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-577-2841, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
MBRA130LT3G
NSN: 5961-01-577-2841
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1MQ07 — SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC DBA SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DIV CORPORATE HEADQUARTERS (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_width0.103 INCHES NOMINAL IN
overall_height0.083 INCHES NOMINAL IN
overall_length0.205 INCHES NOMINAL IN
mounting_methodTERMINAL
special_featuresSURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
part_name_assigned_by_controlling_agencySCHOTTKY POWER RECTIFIER
voltage_rating_in_volts_per_characteristic30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
NSN5961-01-577-2841
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN MBRA130LT3G MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
•
MOUNTING METHOD: TERMINAL
•
MATERIAL: SILICON SEMICONDUCTOR
TECHNICAL CHARACTERISTICS
OVERALL HEIGHT0.083 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHODTERMINAL
OVERALL LENGTH0.205 INCHES NOMINAL IN
OVERALL WIDTH0.103 INCHES NOMINAL IN
SPECIAL FEATURESSURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A
PART NAME ASSIGNED BY CONTROLLING AGENCYSCHOTTKY POWER RECTIFIER
MATERIALSILICON SEMICONDUCTOR
MATERIALPLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is MBRA130LT3G?
MBRA130LT3G is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for MBRA130LT3G?
MBRA130LT3G is cataloged in the U.S. Government catalog under NSN 5961-01-577-2841. This indicates validated use in U.S. government and defense supply chains.
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