MBRA130LT3G: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_width: 0.103 INCHES NOMINAL IN, overall_height: 0.083 INCHES NOMINAL IN, overall_length: 0.205 INCHES NOMINAL IN, mounting_method: TERMINAL, special_features: SURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-577-2841, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_width | 0.103 INCHES NOMINAL IN |
| overall_height | 0.083 INCHES NOMINAL IN |
| overall_length | 0.205 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| special_features | SURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| part_name_assigned_by_controlling_agency | SCHOTTKY POWER RECTIFIER |
| voltage_rating_in_volts_per_characteristic | 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| NSN | 5961-01-577-2841 |
| OVERALL HEIGHT | 0.083 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.205 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.103 INCHES NOMINAL IN |
| SPECIAL FEATURES | SURFACE MOUNT; J BEND LEADS; 1.0 A AVERAGE RECTIFIED FORWARD CURRENT A |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SCHOTTKY POWER RECTIFIER |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
No substitute or cross-reference records for this part.