MA4P908 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MA4P908: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN, overall_height: 0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM IN, overall_length: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-369-6765, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MA4P908

NSN: 5961-01-369-6765
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96341 — COBHAM ADVANCED ELECTRONIC SOLUTIONS INC. (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_width	0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN
overall_height	0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM IN
overall_length	0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN
features_provided	BURN IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-369-6765

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: BURN IN

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
TERMINAL LENGTH	0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN
OVERALL WIDTH	0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM IN
FEATURES PROVIDED	BURN IN
CURRENT RATING PER CHARACTERISTIC	100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 2

UX4P908Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1216983-201Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — mutilation

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FREQUENTLY ASKED QUESTIONS

What is MA4P908?

MA4P908 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace MA4P908?

There are 2 known substitutes for MA4P908: UX4P908, 1216983-201. Substitute compatibility should be verified for your specific system.

What is the NSN for MA4P908?

MA4P908 is cataloged in the U.S. Government catalog under NSN 5961-01-369-6765. This indicates validated use in U.S. government and defense supply chains.

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MA4P908 — SEMICONDUCTOR DEVICE,DIODE

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