MA4E252 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MA4E252: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-975-3623, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MA4E252

NSN: 5961-00-975-3623
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: DG438 — SEMIC RF ELECTRONIC GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
precious_material	GOLD
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
precious_material_and_location	TERMINALS SURFACES GOLD
power_rating_per_characteristic	125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	300.00 NANOAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
voltage_rating_in_volts_per_characteristic	30.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
NSN	5961-00-975-3623

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN

•

PRECIOUS MATERIAL: GOLD

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
PRECIOUS MATERIAL	GOLD
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	300.00 NANOAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
PRECIOUS MATERIAL AND LOCATION	TERMINALS SURFACES GOLD

SUBSTITUTES & CROSS-REFERENCES 3

A2X1010Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

5082-8483Reference document

Same NSN cross-reference

Reference document — Secondary reference

134323-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MA4E252?

MA4E252 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace MA4E252?

There are 3 known substitutes for MA4E252: A2X1010, 5082-8483, 134323-1. Substitute compatibility should be verified for your specific system.

What is the NSN for MA4E252?

MA4E252 is cataloged in the U.S. Government catalog under NSN 5961-00-975-3623. This indicates validated use in U.S. government and defense supply chains.

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MA4E252 — SEMICONDUCTOR DEVICE,DIODE

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