MA47510 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MA47510: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.500 INCHES MAXIMUM IN, overall_diameter: 0.076 INCHES MAXIMUM IN, special_features: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-409-5816, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MA47510

NSN: 5961-00-409-5816
NIINs: 004095816, 011775340
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96341 — COBHAM ADVANCED ELECTRONIC SOLUTIONS INC. (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.500 INCHES MAXIMUM IN
overall_diameter	0.076 INCHES MAXIMUM IN
special_features	WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
features_provided	HERMETICALLY SEALED CASE
end_item_identification	RADIO SET, AN/GRC-171A; TACTICAL AIR OPNS MODULE (AN/TYQ-(23)); RADIO AN/GRC-171B(V)4 A
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
criticality_code_justification	FEAT
power_rating_per_characteristic	50.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
NSN	5961-00-409-5816

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

•

OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	150.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
OVERALL DIAMETER	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.145 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 4

PS3001Reference document

Same NSN cross-reference

Reference document — Secondary reference

353-3623-010Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

5082-8681Reference document

Same NSN cross-reference

Reference document — Secondary reference

D5720BReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MA47510?

MA47510 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace MA47510?

There are 4 known substitutes for MA47510: PS3001, 353-3623-010, 5082-8681 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for MA47510?

MA47510 is cataloged in the U.S. Government catalog under NSN 5961-00-409-5816. This indicates validated use in U.S. government and defense supply chains.

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MA47510 — SEMICONDUCTOR DEVICE,DIODE

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