MA 43736 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

MA 43736: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.060 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.025 INCHES NOMINAL IN, overall_diameter: 0.122 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-013-4910, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

MA 43736

NSN: 5961-01-013-4910
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 96341 — COBHAM ADVANCED ELECTRONIC SOLUTIONS INC. (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.060 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.025 INCHES NOMINAL IN
overall_diameter	0.122 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	1 THREADED STUD AND 1 CASE
power_rating_per_characteristic	6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	80.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
NSN	5961-01-013-4910

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

OVERALL DIAMETER: 0.122 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.025 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

•

TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
OVERALL DIAMETER	0.122 INCHES NOMINAL IN
TERMINAL LENGTH	0.025 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.060 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	1 THREADED STUD AND 1 CASE
POWER RATING PER CHARACTERISTIC	6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 2

17006001Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

GC-3204-55Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is MA 43736?

MA 43736 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace MA 43736?

There are 2 known substitutes for MA 43736: 17006001, GC-3204-55. Substitute compatibility should be verified for your specific system.

What is the NSN for MA 43736?

MA 43736 is cataloged in the U.S. Government catalog under NSN 5961-01-013-4910. This indicates validated use in U.S. government and defense supply chains.

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MA 43736 — SEMICONDUCTOR DEVICE,DIODE

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