<b>Samsung Computing DRAM</b><br><br>The right memory solution can be one of your most important competitive advantages. Samsung leads the industry with cutting-edge DRAM technology, including DDR2, DDR3-and soon, DDR4-to heighten the success of your designs. Leverage Samsung's fastest and highest performance DDR3 memory today with a dual-channel, 128-bit memory module to enable a throughput of more than 25.6GB/s.<br><br><b>Meet intensifying power-efficiency demands</b><br><br>Our latest-generation Computing DRAM provides an outstanding combination of speed and efficiency.
Dedicated on-board power-management features help reduce power consumption during idle memory cycles.<br><br>Energy efficiency can translate into big cost savings for server and desktop environments, long battery life for notebook users, and small carbon footprints. Samsung Computing DRAM solutions boost competitiveness with features enabling you to:<br><br>- Capitalize on our ultralow-power memory technology with 30
| ECC | Yes |
| CAS latency | 11 |
| Component for | PC/Server |
| Memory ranking | 2 |
| Memory voltage | 1.5 V |
| Internal memory | 8 GB |
| Memory clock speed | 1600 MHz |
| Memory form factor | 240-pin DIMM |
| Buffered memory type | Unregistered (unbuffered) |
| Internal memory type | DDR3 |
| Module configuration | 512M x 8 |
| Operating temperature (T-T) | 0 - 85 °C |
No lifecycle data available.