M252515FV: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: CERAMIC OR PLASTIC ENCLOSURE, overall_width: 1.250 INCHES NOMINAL IN, overall_height: 1.060 INCHES NOMINAL IN, overall_length: 2.500 INCHES NOMINAL IN, mounting_method: SLOT AND UNTHREADED HOLE(S), semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-326-2795, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC OR PLASTIC ENCLOSURE |
| overall_width | 1.250 INCHES NOMINAL IN |
| overall_height | 1.060 INCHES NOMINAL IN |
| overall_length | 2.500 INCHES NOMINAL IN |
| mounting_method | SLOT AND UNTHREADED HOLE(S) |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 6 QUICK DISCONNECT, MALE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE AND 2 SEMICONDUCTOR DEVICE THYRISTOR |
| current_rating_per_characteristic | 25.00 AMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE THYRISTOR |
| voltage_rating_in_volts_per_characteristic | 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE |
| NSN | 5961-01-326-2795 |
| OVERALL HEIGHT | 1.060 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE THYRISTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | SLOT AND UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR |
| OVERALL LENGTH | 2.500 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE AND 2 SEMICONDUCTOR DEVICE THYRISTOR |
| OVERALL WIDTH | 1.250 INCHES NOMINAL IN |