LQ801: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 0.645 INCHES NOMINAL IN, overall_height: 0.200 INCHES NOMINAL IN, overall_length: 0.744 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), special_features: 200 C MAX JUNCTION TEMP. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-625-6771, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 0.645 INCHES NOMINAL IN |
| overall_height | 0.200 INCHES NOMINAL IN |
| overall_length | 0.744 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | 200 C MAX JUNCTION TEMP |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 4 PIN |
| power_rating_per_characteristic | 80.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 4.5 AMPERES NOMINAL DRAIN CURRENT |
| part_name_assigned_by_controlling_agency | RF POWER LDMOS TRANSISTOR |
| NSN | 5961-01-625-6771 |
| OVERALL HEIGHT | 0.200 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 NOMINAL DRAIN TO GATE VOLTAGE AND 70.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.744 INCHES NOMINAL IN |
| OVERALL WIDTH | 0.645 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 4.5 AMPERES NOMINAL DRAIN CURRENT |
| SPECIAL FEATURES | 200 C MAX JUNCTION TEMP |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF POWER LDMOS TRANSISTOR |
No substitute or cross-reference records for this part.