LDH1112: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.188 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.180 INCHES MAXIMUM IN, overall_diameter: 0.114 INCHES MAXIMUM IN, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-287-0695, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.188 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.180 INCHES MAXIMUM IN |
| overall_diameter | 0.114 INCHES MAXIMUM IN |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 4.0 MILLICANDELA MINIMUM |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| color_tone_produced_per_source | RED LENS |
| NSN | 5980-01-287-0695 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 0.114 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.180 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 4.0 MILLICANDELA MINIMUM |
| OVERALL LENGTH | 0.188 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
No substitute or cross-reference records for this part.