The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-032-7930, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.210 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.230 INCHES MAXIMUM IN |
| special_features | ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02320; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_circle_diameter | 0.100 INCHES NOMINAL IN |
| terminal_type_and_quantity | 6 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 4 TRANSISTOR |
| criticality_code_justification | FEAT |
| current_rating_per_characteristic | 10.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 0.70 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| NSN | 5961-01-032-7930 |
| MOUNTING METHOD | TERMINAL |
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM IN |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL IN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM IN |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 0.70 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |