The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, end_item_identification: ALQ-99. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-141-2682, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| end_item_identification | ALQ-99 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| specification/standard_data | 81349-MIL-S-19500/156 GOVERNMENT SPECIFICATION |
| voltage_tolerance_in_percent | -5.0 TO 5.0 |
| power_rating_per_characteristic | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 50.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC |
| voltage_rating_in_volts_per_characteristic | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| NSN | 5961-01-141-2682 |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/156 GOVERNMENT SPECIFICATION |
| MOUNTING METHOD | TERMINAL |
| MATERIAL | SILICON SEMICONDUCTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR DEGC |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC |
| OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |