The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 2.150 INCHES MINIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.130 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-157-2803, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 2.150 INCHES MINIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.130 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
| test_data_document | 81349-MIL-STD-750 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| terminal_circle_diameter | 0.022 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| specification/standard_data | 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION |
| power_rating_per_characteristic | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 511.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
| NSN | 5961-01-157-2803 |
| MATERIAL | GLASS ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| MATERIAL | SILICON SEMICONDUCTOR |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS AMBIENT AIR DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-14 |
| POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |