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JANTX1N645-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

JANTX1N645-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.200 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.090 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-626-0041, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
JANTX1N645-1
NSN: 5961-00-626-0041
NIINs: 006260041, 013315988, 013419621
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 9A810 — AVNET, INC. DBA AVNET COMPUTERS (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.200 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.000 INCHES MINIMUM IN
overall_diameter0.090 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
end_item_identificationRADIO SET AN/ARC187RADIORADIO SET AN/ARC187RADIO
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
function_for_which_designedRECTIFIER
specification/standard_data81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
current_rating_per_characteristic5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
NSN5961-00-626-0041
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN JANTX1N645-1 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS AMBIENT AIR DEGC
•
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
•
MOUNTING METHOD: TERMINAL
•
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
•
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC225.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 270.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM IN
TERMINAL LENGTH1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
SPECIFICATION/STANDARD DATA81349-MIL-S-19500/240 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
MATERIALSILICON SEMICONDUCTOR
SUBSTITUTES & CROSS-REFERENCES 7
418714-7Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
632281-001Reference document
Same NSN cross-reference
Reference document — Replaced / superseded reference
4024889-501Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
339648-001Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
1N645Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
6082-1010Reference document
Same NSN cross-reference
Reference document — Advisory reference — outside the item-of-supply concept
LIFECYCLE
NSN statusCancelled· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is JANTX1N645-1?
JANTX1N645-1 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace JANTX1N645-1?
There are 7 known substitutes for JANTX1N645-1: 418714-7, 632281-001, 4024889-501 and 4 more. Substitute compatibility should be verified for your specific system.
What is the NSN for JANTX1N645-1?
JANTX1N645-1 is cataloged in the U.S. Government catalog under NSN 5961-00-626-0041. This indicates validated use in U.S. government and defense supply chains.
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✓ PartsTable — the parts reference. Every fact cited to its source.
PartsTable Design LLC · partstable.com
U.S. Government catalog: edition PUBLOGDVD v12.0.0 (OCT 2026), edition date 2026-10-01, retrieved 2026-10-18.
PartsTable commercial catalog: edition Unified commercial catalog snapshot through 2026-09-28, edition date not on file, retrieved 2026-09-28.