The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM IN, features_provided: GOLD PLATED LEADS, precious_material: GOLD, end_item_identification: B-1B, terminal_circle_diameter: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM IN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-203-4101, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM IN |
| special_features | METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010",+ OR - .002" |
| features_provided | GOLD PLATED LEADS |
| precious_material | GOLD |
| end_item_identification | B-1B |
| terminal_circle_diameter | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM IN |
| precious_material_and_location | BACK (CATHODE) GOLD |
| current_rating_per_characteristic | 200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION |
| part_name_assigned_by_controlling_agency | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |
| voltage_rating_in_volts_per_characteristic | 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| maximum_operating_temp_per_measurement_point | -65.0 CELSIUS AMBIENT AIR AND 175.00 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-203-4101 |
| PRECIOUS MATERIAL | GOLD |
| MATERIAL | SILICON SEMICONDUCTOR |
| FEATURES PROVIDED | GOLD PLATED LEADS |
| END ITEM IDENTIFICATION | B-1B |
| OVERALL LENGTH | 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM IN |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| TERMINAL CIRCLE DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM IN |
| SPECIAL FEATURES | METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010",+ OR - .002" |
| PRECIOUS MATERIAL AND LOCATION | BACK (CATHODE) GOLD |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |