JAN2N5809 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN2N5809: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN, semiconductor_material: SILICON, end_item_identification: INSTRUMENTATI 02750. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-141-5645, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN2N5809

NSN: 5961-01-141-5645
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18722 — HARRIS CORP SEMICONDUCTOR SECTOR (USA)

SPECIFICATIONS

overall_length	0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDRD NO. L03204; FOR N AVY NUCLEAR PROPULION PLANT PRODUCTS ONLY
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
semiconductor_material	SILICON
end_item_identification	INSTRUMENTATI 02750
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
criticality_code_justification	FEAT
NSN	5961-01-141-5645

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS AND 600.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 CELSIUS AMBIENT AIR DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

CRITICALITY CODE JUSTIFICATION: FEAT

•

SEMICONDUCTOR MATERIAL: SILICON

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	4.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS AND 600.0 MAXIMUM OFF-STATE VOLTAGE, RMS TOTAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	115.0 CELSIUS AMBIENT AIR DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
CRITICALITY CODE JUSTIFICATION	FEAT
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.250 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementDemilitarization required — mutilation

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FREQUENTLY ASKED QUESTIONS

What is JAN2N5809?

JAN2N5809 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What is the NSN for JAN2N5809?

JAN2N5809 is cataloged in the U.S. Government catalog under NSN 5961-01-141-5645. This indicates validated use in U.S. government and defense supply chains.

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JAN2N5809 — SEMICONDUCTOR DEVICE,THYRISTOR

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