JAN2N5003 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN2N5003: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.394 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), overall_diameter: 0.408 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-013-0832, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN2N5003

NSN: 5961-01-013-0832
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 81349 — MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

SPECIFICATIONS

overall_length	0.394 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
overall_diameter	0.408 INCHES NOMINAL IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.430 INCHES NOMINAL IN
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 3 WIRE HOOK
NSN	5961-01-013-0832

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59

•

OVERALL DIAMETER: 0.408 INCHES NOMINAL IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-59
OVERALL DIAMETER	0.408 INCHES NOMINAL IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.394 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE

SUBSTITUTES & CROSS-REFERENCES 5

2N5003Reference document

Same NSN cross-reference

Reference document — Secondary reference

14512-001Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

RELEASE5569Reference document

Same NSN cross-reference

Reference document — Secondary reference

450900-2031Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

5L.5512.101.69Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN2N5003?

JAN2N5003 is a TRANSISTOR.

What parts can replace JAN2N5003?

There are 5 known substitutes for JAN2N5003: 2N5003, 14512-001, RELEASE5569 and 2 more. Substitute compatibility should be verified for your specific system.

What is the NSN for JAN2N5003?

JAN2N5003 is cataloged in the U.S. Government catalog under NSN 5961-01-013-0832. This indicates validated use in U.S. government and defense supply chains.

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