JAN2N3330A — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN2N3330A: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_height: 0.210 INCHES MAXIMUM IN, overall_length: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN, overall_diameter: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-110-9205, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN2N3330A

NSN: 5961-00-110-9205
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C7191 — ADELCO ELEKTRONIK GMBH (DEU)

SPECIFICATIONS

overall_height	0.210 INCHES MAXIMUM IN
overall_length	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN
overall_diameter	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	4 UNINSULATED WIRE LEAD
specification/standard_data	81349-MIL-S-19500/378 GOVERNMENT SPECIFICATION
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-00-110-9205

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.210 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	-10.00 MILLIAMPERES MAXIMUM GATE CURRENT

SUBSTITUTES & CROSS-REFERENCES 3

MIL-S-19500/378Reference document

Same NSN cross-reference

Reference document — Identification reference

JAN2N3330Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

5961PL1336171Reference document

Same NSN cross-reference

Reference document — Informative reference only

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN2N3330A?

JAN2N3330A is a TRANSISTOR.

What parts can replace JAN2N3330A?

There are 3 known substitutes for JAN2N3330A: MIL-S-19500/378, JAN2N3330, 5961PL1336171. Substitute compatibility should be verified for your specific system.

What is the NSN for JAN2N3330A?

JAN2N3330A is cataloged in the U.S. Government catalog under NSN 5961-00-110-9205. This indicates validated use in U.S. government and defense supply chains.

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