JAN1N6118A — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN1N6118A: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.185 INCHES NOMINAL IN, mounting_method: TERMINAL, features_provided: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, power_rating_per_characteristic: 500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-700-1301, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN1N6118A

NSN: 5961-01-700-1301
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 43611 — MICROSEMI CORP - MASSACHUSETTS (USA)

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.185 INCHES NOMINAL IN
mounting_method	TERMINAL
features_provided	ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
current_rating_per_characteristic	10.9 AMPERES NOMINAL PEAK PULSE CURRENT
part_name_assigned_by_controlling_agency	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
voltage_rating_in_volts_per_characteristic	31.4 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
NSN	5961-01-700-1301

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 10.9 AMPERES NOMINAL PEAK PULSE CURRENT

•

MATERIAL: GLASS ENCLOSURE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	31.4 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.185 INCHES NOMINAL IN
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	10.9 AMPERES NOMINAL PEAK PULSE CURRENT
SPECIAL FEATURES	TRIPLE-LAYER PASSIVATION ; OPERATING & STORAGE TEMPERATURE: -55 DEG C TO +175 DEG C; CASE: HERMETICALLY SEALED VOIDLESS HARD GLASS WITH TUNGSTEN SLUGS; TERMINATIONS: AXIAL-LEADS ARE TIN/LEAD (SN/PB) OVER COPPER; WEIGHT: 750 MG DEGC
PART NAME ASSIGNED BY CONTROLLING AGENCY	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	500.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN1N6118A?

JAN1N6118A is a SEMICONDUCTOR DEVICE,DIODE.

What is the NSN for JAN1N6118A?

JAN1N6118A is cataloged in the U.S. Government catalog under NSN 5961-01-700-1301. This indicates validated use in U.S. government and defense supply chains.

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JAN1N6118A — SEMICONDUCTOR DEVICE,DIODE

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