JAN1N6053A — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN1N6053A: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN, overall_diameter: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN, special_features: INSULATION SLEEVING. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-140-4565, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN1N6053A

NSN: 5961-01-140-4565
NIINs: 011404565, 012291464, 012637479
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 12954 — MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM IN
overall_diameter	0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN
special_features	INSULATION SLEEVING
features_provided	HERMETICALLY SEALED CASE
end_item_identification	5895-01-146-6739
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	TRANSIENT SUPPRESSOR
specification/standard_data	81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
power_rating_per_characteristic	1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
NSN	5961-01-140-4565

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 37.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 41.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

•

OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	37.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 41.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
OVERALL DIAMETER	0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM IN
FUNCTION FOR WHICH DESIGNED	TRANSIENT SUPPRESSOR
SPECIAL FEATURES	INSULATION SLEEVING
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS OR PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD W/TERMINAL LUG

SUBSTITUTES & CROSS-REFERENCES 2

12298080-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

KCII/1387-2Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN1N6053A?

JAN1N6053A is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace JAN1N6053A?

There are 2 known substitutes for JAN1N6053A: 12298080-2, KCII/1387-2. Substitute compatibility should be verified for your specific system.

What is the NSN for JAN1N6053A?

JAN1N6053A is cataloged in the U.S. Government catalog under NSN 5961-01-140-4565. This indicates validated use in U.S. government and defense supply chains.

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