The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, body_length: 0.625 INCHES NOMINAL IN, body_diameter: 0.188 INCHES NOMINAL IN, terminal_type: WIRE LEAD, inclosure_type: ENCAPSULATED, overall_length: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5905-00-009-3002, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| body_length | 0.625 INCHES NOMINAL IN |
| body_diameter | 0.188 INCHES NOMINAL IN |
| terminal_type | WIRE LEAD |
| inclosure_type | ENCAPSULATED |
| overall_length | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| overall_diameter | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM IN |
| style_designator | AXIAL TERMINAL EACH END |
| features_provided | HERMETICALLY SEALED CASE |
| electrical_resistance | 681.000 OHMS |
| NSN | 5905-00-009-3002 |
| TEMP COEFFICIENT OF RESISTANCE IN PPM PER DEG CELSIUS | -50.0 TO 50.0 |
| STYLE DESIGNATOR | AXIAL TERMINAL EACH END |
| AMBIENT TEMP IN DEG CELSIUS AT ZERO PERCENT RATED POWER | 175.0 |
| TEMP RANGE OF TEMP COEFFICIENT IN DEG CELSIUS | -55.0 TO 175.0 |
| ELECTRICAL RESISTANCE | 681.000 OHMS |
| BODY DIAMETER | 0.188 INCHES NOMINAL IN |
| RELIABILITY FAILURE RATE LEVEL IN PERCENT | 0.001 |
| BODY LENGTH | 0.625 INCHES NOMINAL IN |
| POWER DISSIPATION RATING IN WATTS | 0.250 FREE AIR |
| AMBIENT TEMP AT FULL RATED POWER | 125.0 CELSIUS DEGC |