JAN1N3317BA — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

JAN1N3317BA: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.450 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S) AND TERMINAL, overall_diameter: 0.667 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-135-2142, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

JAN1N3317BA

NSN: 5961-00-135-2142
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: C7191 — ADELCO ELEKTRONIK GMBH (DEU)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.450 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S) AND TERMINAL
overall_diameter	0.667 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG
specification/standard_data	81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
power_rating_per_characteristic	50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
NSN	5961-00-135-2142

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.667 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S) AND TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	18.9 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.667 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S) AND TERMINAL
OVERALL LENGTH	0.450 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	2640.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

SUBSTITUTES & CROSS-REFERENCES 4

530578-13Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

JAN1N3317BSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

MIL-S-19500/358Reference document

Same NSN cross-reference

Reference document — Secondary reference

MIL-PRF-19500/358Reference document

Same NSN cross-reference

Reference document — Identification reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is JAN1N3317BA?

JAN1N3317BA is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace JAN1N3317BA?

There are 4 known substitutes for JAN1N3317BA: 530578-13, JAN1N3317B, MIL-S-19500/358 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for JAN1N3317BA?

JAN1N3317BA is cataloged in the U.S. Government catalog under NSN 5961-00-135-2142. This indicates validated use in U.S. government and defense supply chains.

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