IXSH35N100A — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

IXSH35N100A: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.8 MILLIMETERS NOMINAL MM, mounting_method: UNTHREADED HOLE(S), special_features: MAXIMUM POWER DISS. 300 WATTS.

MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS., semiconductor_material: SILICON, end_item_identification: C130 PWR UNIT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-465-2841, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

IXSH35N100A

NSN: 5961-01-465-2841
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 0A5K5 — IXYS, LLC (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.8 MILLIMETERS NOMINAL MM
mounting_method	UNTHREADED HOLE(S)
special_features	MAXIMUM POWER DISS. 300 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS.
semiconductor_material	SILICON
end_item_identification	C130 PWR UNIT
mounting_facility_quantity	1
terminal_type_and_quantity	3 INSULATED WIRE LEAD
current_rating_per_characteristic	70.00 AMPERES NOMINAL DRAIN CURRENT
NSN	5961-01-465-2841

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 7.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES NOMINAL DRAIN CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 7.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.8 MILLIMETERS NOMINAL MM
CURRENT RATING PER CHARACTERISTIC	70.00 AMPERES NOMINAL DRAIN CURRENT
SPECIAL FEATURES	MAXIMUM POWER DISS. 300 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS.
END ITEM IDENTIFICATION	C130 PWR UNIT
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	3 INSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

197-IXSH35N100AReference document

Same NSN cross-reference

Reference document — Drawing number reference only

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is IXSH35N100A?

IXSH35N100A is a TRANSISTOR.

What parts can replace IXSH35N100A?

There is 1 known substitute for IXSH35N100A: 197-IXSH35N100A. Substitute compatibility should be verified for your specific system.

What is the NSN for IXSH35N100A?

IXSH35N100A is cataloged in the U.S. Government catalog under NSN 5961-01-465-2841. This indicates validated use in U.S. government and defense supply chains.

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