IRKT91-10: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_width: 0.200 INCHES NOMINAL IN, overall_height: 1.460 INCHES NOMINAL IN, overall_length: 3.620 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), special_features: SINGLE SEMICONDUCTOR DEVICE THYRISTOR JUNCTION PATTERN ARRANGEMENT: PNPN, semiconductor_material: SILICON SINGLE SEMICONDUCTOR DEVICE THYRISTOR. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-368-9015, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.200 INCHES NOMINAL IN |
| overall_height | 1.460 INCHES NOMINAL IN |
| overall_length | 3.620 INCHES NOMINAL IN |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | SINGLE SEMICONDUCTOR DEVICE THYRISTOR JUNCTION PATTERN ARRANGEMENT: PNPN |
| semiconductor_material | SILICON SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 4 TAB, SOLDER LUG AND 3 SCREW |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE THYRISTOR |
| current_rating_per_characteristic | 200.00 AMPERES NOMINAL ON-STATE CURRENT, DC AND 90.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 120.00 AMPERES NOMINAL GATE TRIGGER CURRENT, DC SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
| voltage_rating_in_volts_per_characteristic | 1000.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
| maximum_operating_temp_per_measurement_point | 85.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-01-368-9015 |
| OVERALL HEIGHT | 1.460 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 85.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
| OVERALL LENGTH | 3.620 INCHES NOMINAL IN |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE THYRISTOR |
| OVERALL WIDTH | 0.200 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 200.00 AMPERES NOMINAL ON-STATE CURRENT, DC AND 90.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 120.00 AMPERES NOMINAL GATE TRIGGER CURRENT, DC SINGLE SEMICONDUCTOR DEVICE THYRISTOR |
No substitute or cross-reference records for this part.