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IRFD113 — TRANSISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

IRFD113: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.198 INCHES MAXIMUM IN, overall_height: 0.140 INCHES MAXIMUM IN, overall_length: 0.280 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.150 INCHES MAXIMUM IN, special_features: 4-PIN,DUAL-IN-LINE PACKAGE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-253-5627, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
IRFD113
NSN: 5961-01-253-5627
NIINs: 012535627, 013354964
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)
SPECIFICATIONS
overall_width0.198 INCHES MAXIMUM IN
overall_height0.140 INCHES MAXIMUM IN
overall_length0.280 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length0.150 INCHES MAXIMUM IN
special_features4-PIN,DUAL-IN-LINE PACKAGE
internal_configurationFIELD EFFECT
semiconductor_materialSILICON
power_rating_per_characteristic1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic0.80 AMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point150.0 CELSIUS JUNCTION DEGC
NSN5961-01-253-5627
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN IRFD113 MFR OEM TRANSISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC
•
TERMINAL LENGTH: 0.150 INCHES MAXIMUM IN
•
MOUNTING METHOD: TERMINAL
•
SEMICONDUCTOR MATERIAL: SILICON
•
INTERNAL CONFIGURATION: FIELD EFFECT
TECHNICAL CHARACTERISTICS
OVERALL HEIGHT0.140 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS JUNCTION DEGC
TERMINAL LENGTH0.150 INCHES MAXIMUM IN
MOUNTING METHODTERMINAL
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH0.280 INCHES MAXIMUM IN
INTERNAL CONFIGURATIONFIELD EFFECT
OVERALL WIDTH0.198 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC0.80 AMPERES MAXIMUM DRAIN CURRENT
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is IRFD113?
IRFD113 is a TRANSISTOR.
What is the NSN for IRFD113?
IRFD113 is cataloged in the U.S. Government catalog under NSN 5961-01-253-5627. This indicates validated use in U.S. government and defense supply chains.
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