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IRFBC30PBF — TRANSISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

IRFBC30PBF: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN, overall_height: 1.114 INCHES MINIMUM AND 1.144 INCHES MAXIMUM IN, overall_length: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-375-5452, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
IRFBC30PBF
NSN: 5961-01-375-5452
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 17856 — SILICONIX INCORPORATED DIV SILICONIX (USA)
SPECIFICATIONS
materialPLASTIC ENCLOSURE
overall_width0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN
overall_height1.114 INCHES MINIMUM AND 1.144 INCHES MAXIMUM IN
overall_length0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM IN
mounting_methodUNTHREADED HOLE(S)
semiconductor_materialSILICON
mounting_facility_quantity1
terminal_type_and_quantity3 PIN
power_rating_per_characteristic74.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic3.60 AMPERES NOMINAL DRAIN CURRENT
voltage_rating_in_volts_per_characteristic600.0 NOMINAL DRAIN TO SOURCE VOLTAGE
joint_electronic_device_engineering_council/jedec/case_outline_designationTO-220AB
NSN5961-01-375-5452
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN IRFBC30PBF MFR OEM TRANSISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL DRAIN TO SOURCE VOLTAGE
•
MOUNTING FACILITY QUANTITY: 1
•
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
•
MOUNTING METHOD: UNTHREADED HOLE(S)
•
SEMICONDUCTOR MATERIAL: SILICON
TECHNICAL CHARACTERISTICS
OVERALL HEIGHT1.114 INCHES MINIMUM AND 1.144 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 NOMINAL DRAIN TO SOURCE VOLTAGE
MOUNTING FACILITY QUANTITY1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHODUNTHREADED HOLE(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM IN
OVERALL WIDTH0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC3.60 AMPERES NOMINAL DRAIN CURRENT
MATERIALPLASTIC ENCLOSURE
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES 1
IRFBC30Reference document
Same NSN cross-reference
Reference document — Design control — primary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is IRFBC30PBF?
IRFBC30PBF is a TRANSISTOR.
What parts can replace IRFBC30PBF?
There is 1 known substitute for IRFBC30PBF: IRFBC30. Substitute compatibility should be verified for your specific system.
What is the NSN for IRFBC30PBF?
IRFBC30PBF is cataloged in the U.S. Government catalog under NSN 5961-01-375-5452. This indicates validated use in U.S. government and defense supply chains.
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