IRF9150: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON, function_for_which_designed: SWITCHING, power_rating_per_characteristic: 150.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-594-7973, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| mounting_method | UNTHREADED HOLE(S) |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| function_for_which_designed | SWITCHING |
| power_rating_per_characteristic | 150.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
| NSN | 5961-01-594-7973 |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| SEMICONDUCTOR MATERIAL | SILICON |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| SPECIAL FEATURES | SINGLE PULSE AVALANCHE ENERGY RELATED; SOA IS POWER DISSIPATION LIMITED; NANOSECOND SWITCHING SPEEDS; LINEAR TRANSFER CHARACTERISTICS; HIGH INPUT IMPEDANCE; -25 TO -100V; P-CHANNEL ENHANCEMENT MODE GATE POWER FIELD EFFECT TRANSISTOR V |
| POWER RATING PER CHARACTERISTIC | 150.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION |
No substitute or cross-reference records for this part.