IRF840PBF: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include mounting_method: TERMINAL, special_features: MOSFET, internal_configuration: JUNCTION CONTACT, semiconductor_material: SILICON, terminal_type_and_quantity: 3 PIN, power_rating_per_characteristic: 125.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-575-3148, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| mounting_method | TERMINAL |
| special_features | MOSFET |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 125.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION |
| current_rating_per_characteristic | 5.10 AMPERES MINIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-575-3148 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION DEGC |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 5.10 AMPERES MINIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM DRAIN CURRENT |
| SPECIAL FEATURES | MOSFET |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| POWER RATING PER CHARACTERISTIC | 125.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION |
No substitute or cross-reference records for this part.