IL217AT: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.154 INCHES NOMINAL IN, overall_height: 0.125 INCHES NOMINAL IN, overall_length: 0.192 INCHES NOMINAL IN, mounting_method: TERMINAL, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-514-5904, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.154 INCHES NOMINAL IN |
| overall_height | 0.125 INCHES NOMINAL IN |
| overall_length | 0.192 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | GALLIUM ARSENIDE |
| terminal_type_and_quantity | 8 PIN |
| color_tone_produced_per_source | INFRARED SEMICONDUCTOR |
| internal_junction_configuration | NPN |
| power_rating_per_characteristic | 90.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| NSN | 5980-01-514-5904 |
| OVERALL HEIGHT | 0.125 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| OVERALL LENGTH | 0.192 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.154 INCHES NOMINAL IN |
| CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| MATERIAL | PLASTIC ENCLOSURE |
No substitute or cross-reference records for this part.