IDT6167LA55EBRT — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

IDT6167LA55EBRT: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include special_features: RAD HARD PER RAYTHEON G371916; ANSI Y14.5M-1982, features_provided: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: RAM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-356-9162, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

IDT6167LA55EBRT

NSN: 5962-01-356-9162
FSC: 5962 — Microcircuits, Electronic
CAGE: 61772 — INTEGRATED DEVICE TECHNOLOGY INC (USA)

SPECIFICATIONS

special_features	RAD HARD PER RAYTHEON G371916; ANSI Y14.5M-1982
features_provided	ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	RAM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
end_item_identification	MILSTAR
inclosure_configuration	FLAT PACK
terminal_type_and_quantity	20 FLAT LEADS
criticality_code_justification	CBBL AND FEAT AND NHCF
nuclear_hardness_critical_feature	HARDENED
NSN	5962-01-356-9162

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

CRITICALITY CODE JUSTIFICATION: CBBL AND FEAT AND NHCF

•

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED

•

INCLOSURE CONFIGURATION: FLAT PACK

•

MEMORY DEVICE TYPE: RAM

•

CASE OUTLINE SOURCE AND DESIGNATOR: F-9 MIL-M-38510

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

•

OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
CRITICALITY CODE JUSTIFICATION	CBBL AND FEAT AND NHCF
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
INCLOSURE CONFIGURATION	FLAT PACK
MEMORY DEVICE TYPE	RAM
CASE OUTLINE SOURCE AND DESIGNATOR	F-9 MIL-M-38510
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES	RAD HARD PER RAYTHEON G371916; ANSI Y14.5M-1982
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY

OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909

SUBSTITUTES & CROSS-REFERENCES 1

G309490-2Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is IDT6167LA55EBRT?

IDT6167LA55EBRT is a MICROCIRCUIT,MEMORY.

What parts can replace IDT6167LA55EBRT?

There is 1 known substitute for IDT6167LA55EBRT: G309490-2. Substitute compatibility should be verified for your specific system.

What is the NSN for IDT6167LA55EBRT?

IDT6167LA55EBRT is cataloged in the U.S. Government catalog under NSN 5962-01-356-9162. This indicates validated use in U.S. government and defense supply chains.

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IDT6167LA55EBRT — MICROCIRCUIT,MEMORY

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