IDT6116SA55TDB: MICROCIRCUIT,DIGITAL.
The MICROCIRCUIT,DIGITAL is a the manufacturer industrial component. Key specifications include body_width: 0.310 INCHES MAXIMUM IN, body_height: 0.200 INCHES MAXIMUM IN, body_length: 1.280 INCHES MAXIMUM IN, features_provided: HIGH SPEED AND LOW POWER, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC. This part is cataloged in the U.S.
Government catalog under NSN 5962-01-308-3055, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| body_width | 0.310 INCHES MAXIMUM IN |
| body_height | 0.200 INCHES MAXIMUM IN |
| body_length | 1.280 INCHES MAXIMUM IN |
| features_provided | HIGH SPEED AND LOW POWER |
| output_logic_form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| inclosure_material | CERAMIC |
| memory_device_type | RAM |
| storage_temp_range | -65.0 TO 150.0 CELSIUS DEGC |
| test_data_document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| operating_temp_range | -55.0 TO 125.0 CELSIUS DEGC |
| input_circuit_pattern | 22 INPUT |
| inclosure_configuration | DUAL-IN-LINE |
| NSN | 5962-01-308-3055 |
| INCLOSURE MATERIAL | CERAMIC |
| FEATURES PROVIDED | HIGH SPEED AND LOW POWER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS DEGC |