IDT6116S120TB — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

IDT6116S120TB: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.295 INCHES NOMINAL IN, body_height: 0.120 INCHES MAXIMUM IN, body_length: 1.200 INCHES NOMINAL IN, features_provided: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND HIGH PERFORMANCE AND HIGH RELIABILITY, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-231-8327, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

IDT6116S120TB

NSN: 5962-01-231-8327
FSC: 5962 — Microcircuits, Electronic
CAGE: 61772 — INTEGRATED DEVICE TECHNOLOGY INC (USA)

SPECIFICATIONS

body_width	0.295 INCHES NOMINAL IN
body_height	0.120 INCHES MAXIMUM IN
body_length	1.200 INCHES NOMINAL IN
features_provided	ELECTROSTATIC SENSITIVE AND HIGH SPEED AND HIGH PERFORMANCE AND HIGH RELIABILITY
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	ROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
test_data_document	96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
input_circuit_pattern	22 INPUT
inclosure_configuration	DUAL-IN-LINE
NSN	5962-01-231-8327

COMPONENT DIAGRAM

KEY FEATURES

•

INPUT CIRCUIT PATTERN: 22 INPUT

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

BODY WIDTH: 0.295 INCHES NOMINAL IN

•

BODY HEIGHT: 0.120 INCHES MAXIMUM IN

•

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HIGH SPEED AND HIGH PERFORMANCE AND HIGH RELIABILITY

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: ROM

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INPUT CIRCUIT PATTERN	22 INPUT
INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
BODY WIDTH	0.295 INCHES NOMINAL IN
BODY HEIGHT	0.120 INCHES MAXIMUM IN
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND HIGH SPEED AND HIGH PERFORMANCE AND HIGH RELIABILITY
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	ROM
BODY LENGTH	1.200 INCHES NOMINAL IN
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC

OTHER ITEMS IN FSC 5962 — Microcircuits, Electronic

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5962-00-001-1861 5962-00-001-1901 5962-00-001-1902 5962-00-001-1905 5962-00-001-1906 5962-00-001-1907 5962-00-001-1908 5962-00-001-1909

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is IDT6116S120TB?

IDT6116S120TB is a MICROCIRCUIT,MEMORY.

What is the NSN for IDT6116S120TB?

IDT6116S120TB is cataloged in the U.S. Government catalog under NSN 5962-01-231-8327. This indicates validated use in U.S. government and defense supply chains.

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IDT6116S120TB — MICROCIRCUIT,MEMORY

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