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IDT6116LA90DB — MICROCIRCUIT,MEMORY

✓ Government record, cited
— · COMPONENT
PRODUCT OVERVIEW

IDT6116LA90DB: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include body_width: 0.610 INCHES NOMINAL IN, body_height: 0.225 INCHES NOMINAL IN, body_length: 1.290 INCHES NOMINAL IN, special_features: 2048X8 RAM, features_provided: LOW POWER AND STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND TESTED TO MIL-STD-883, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-369-0489, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
IDT6116LA90DB
NSN: 5962-01-369-0489
NIINs: 013690489, 013778555, 013911042
FSC: 5962 — Microcircuits, Electronic
CAGE: 61772 — INTEGRATED DEVICE TECHNOLOGY INC (USA)
SPECIFICATIONS
body_width0.610 INCHES NOMINAL IN
body_height0.225 INCHES NOMINAL IN
body_length1.290 INCHES NOMINAL IN
special_features2048X8 RAM
features_providedLOW POWER AND STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND TESTED TO MIL-STD-883
output_logic_formCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
memory_device_typeRAM
storage_temp_range-55.0 TO 150.0 CELSIUS DEGC
operating_temp_range-55.0 TO 125.0 CELSIUS DEGC
inclosure_configurationDUAL-IN-LINE
terminal_surface_treatmentSOLDER
time_rating_per_chacteristic90.00 NANOSECONDS MAXIMUM ACCESS NS
NSN5962-01-369-0489
COMPONENT DIAGRAM
COMPONENT MAIN IC EDGE CONNECTOR No detailed specs available MICROCIRCUIT,MEMORY TITLE COMPONENT PN IDT6116LA90DB MFR MICROCIRCUIT,MEMORY
KEY FEATURES
•
FEATURES PROVIDED: LOW POWER AND STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND TESTED TO MIL-STD-883
•
INCLOSURE CONFIGURATION: DUAL-IN-LINE
•
MEMORY DEVICE TYPE: RAM
•
OPERATING TEMP RANGE: -55.0 TO 125.0 CELSIUS DEGC
•
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM ACCESS NS
TYPICAL APPLICATIONS
  • Server memory expansion for virtualization workloads
  • Database performance optimization (in-memory computing)
  • VDI and remote desktop session hosting
  • High-performance computing (HPC) clusters
  • Mail server and collaboration platform scaling
  • Application server tier expansion
TECHNICAL CHARACTERISTICS
FEATURES PROVIDEDLOW POWER AND STATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS AND TESTED TO MIL-STD-883
INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY DEVICE TYPERAM
OPERATING TEMP RANGE-55.0 TO 125.0 CELSIUS DEGC
TIME RATING PER CHACTERISTIC90.00 NANOSECONDS MAXIMUM ACCESS NS
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Demilitarization required — mutilation + specific procedure
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FREQUENTLY ASKED QUESTIONS
What is IDT6116LA90DB?
IDT6116LA90DB is a MICROCIRCUIT,MEMORY.
What is the NSN for IDT6116LA90DB?
IDT6116LA90DB is cataloged in the U.S. Government catalog under NSN 5962-01-369-0489. This indicates validated use in U.S. government and defense supply chains.
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