HXTR-2101-TXV: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.370 INCHES NOMINAL IN, overall_height: 0.050 INCHES NOMINAL IN, overall_length: 0.370 INCHES NOMINAL IN, mounting_method: PRESS FIT, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-267-7098, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.370 INCHES NOMINAL IN |
| overall_height | 0.050 INCHES NOMINAL IN |
| overall_length | 0.370 INCHES NOMINAL IN |
| transfer_ratio | 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 220.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| mounting_method | PRESS FIT |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 4 RIBBON |
| power_rating_per_characteristic | 900.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| NSN | 5961-01-267-7098 |
| OVERALL HEIGHT | 0.050 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | HPAC-100 |
| MOUNTING METHOD | PRESS FIT |
| TRANSFER RATIO | 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 220.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.370 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| OVERALL WIDTH | 0.370 INCHES NOMINAL IN |