HSCH-0812 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

HSCH-0812: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.076 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-123-2991, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

HSCH-0812

NSN: 5961-01-123-2991
NIINs: 011232991, 011613398
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 54893 — HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.076 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
end_item_identification	RADAR SYSTEM AN/FPS-117
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	2.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-01-123-2991

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.076 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.600 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	2.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.076 INCHES MAXIMUM IN
TERMINAL LENGTH	1.600 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.170 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
END ITEM IDENTIFICATION	RADAR 76301
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 7

MA4E209Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

8879000100-1Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

MX5236-75Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

HSCH-3486Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

QSCH-3951Reference document

Same NSN cross-reference

Reference document — Secondary reference

A2X1645Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is HSCH-0812?

HSCH-0812 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace HSCH-0812?

There are 7 known substitutes for HSCH-0812: MA4E209, 8879000100-1, MX5236-75 and 4 more. Substitute compatibility should be verified for your specific system.

What is the NSN for HSCH-0812?

HSCH-0812 is cataloged in the U.S. Government catalog under NSN 5961-01-123-2991. This indicates validated use in U.S. government and defense supply chains.

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HSCH-0812 — SEMICONDUCTOR DEVICE,DIODE

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