HP2900 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

HP2900: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.250 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.096 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-110-7491, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

HP2900

NSN: 5961-00-110-7491
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 52800 — TRI-PHENIX ELECTRONICS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.250 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.096 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	50.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	-10.0 MAXIMUM BREAKDOWN VOLTAGE, DC
maximum_operating_temp_per_measurement_point	100.0 CELSIUS CASE DEGC
NSN	5961-00-110-7491

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -10.0 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS CASE DEGC

•

OVERALL DIAMETER: 0.096 INCHES NOMINAL IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-10.0 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS CASE DEGC
OVERALL DIAMETER	0.096 INCHES NOMINAL IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.250 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	1.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 7

4-30715PSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

AE0128018Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

016-1D918Reference document

Same NSN cross-reference

Reference document — Secondary reference

HP5082-2900Reference document

Same NSN cross-reference

Reference document — Secondary reference

5082-2900Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1711252-1Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is HP2900?

HP2900 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace HP2900?

There are 7 known substitutes for HP2900: 4-30715P, AE0128018, 016-1D918 and 4 more. Substitute compatibility should be verified for your specific system.

What is the NSN for HP2900?

HP2900 is cataloged in the U.S. Government catalog under NSN 5961-00-110-7491. This indicates validated use in U.S. government and defense supply chains.

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HP2900 — SEMICONDUCTOR DEVICE,DIODE

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