H00080-9 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

H00080-9: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.150 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: FIELD EFFECT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-251-7035, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

H00080-9

NSN: 5961-01-251-7035
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 59640 — SUPERTEX INC. (USA)

SPECIFICATIONS

overall_length	0.150 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES NOMINAL IN
overall_diameter	0.230 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	FIELD EFFECT
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
power_rating_per_characteristic	1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	-2.00 AMPERES MAXIMUM DRAIN CURRENT
voltage_rating_in_volts_per_characteristic	-90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE
NSN	5961-01-251-7035

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.230 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.150 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	FIELD EFFECT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	-2.00 AMPERES MAXIMUM DRAIN CURRENT

SUBSTITUTES & CROSS-REFERENCES 1

VP0109N9Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — no further procurement; issued until stock is exhaustedNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is H00080-9?

H00080-9 is a TRANSISTOR.

What parts can replace H00080-9?

There is 1 known substitute for H00080-9: VP0109N9. Substitute compatibility should be verified for your specific system.

What is the NSN for H00080-9?

H00080-9 is cataloged in the U.S. Government catalog under NSN 5961-01-251-7035. This indicates validated use in U.S. government and defense supply chains.

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H00080-9 — TRANSISTOR

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