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GZ82519E — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

GZ82519E: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.250 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-271-5460, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
GZ82519E
NSN: 5961-01-271-5460
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 24444 — GENERAL SEMICONDUCTOR INDUSTRIES INC (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length1.250 INCHES MAXIMUM IN
mounting_methodTHREADED STUD(S)
features_providedHERMETICALLY SEALED CASE
nominal_thread_size0.190 INCHES IN
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats0.445 INCHES MAXIMUM IN
terminal_type_and_quantity1 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic99.00 AMPERES MAXIMUM PEAK PULSE CURRENT
voltage_rating_in_volts_per_characteristic18.9 MAXIMUM BREAKDOWN VOLTAGE, DC
NSN5961-01-271-5460
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN GZ82519E MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MAXIMUM BREAKDOWN VOLTAGE, DC
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
•
MOUNTING METHOD: THREADED STUD(S)
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES MAXIMUM IN
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC18.9 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONDO-4
MOUNTING METHODTHREADED STUD(S)
OVERALL LENGTH1.250 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS0.445 INCHES MAXIMUM IN
NOMINAL THREAD SIZE0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC99.00 AMPERES MAXIMUM PEAK PULSE CURRENT
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is GZ82519E?
GZ82519E is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for GZ82519E?
GZ82519E is cataloged in the U.S. Government catalog under NSN 5961-01-271-5460. This indicates validated use in U.S. government and defense supply chains.
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