GZ82517A: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_width: 3.000 INCHES NOMINAL IN, overall_height: 1.750 INCHES NOMINAL IN, overall_length: 3.500 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-355-0503, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_width | 3.000 INCHES NOMINAL IN |
| overall_height | 1.750 INCHES NOMINAL IN |
| overall_length | 3.500 INCHES NOMINAL IN |
| mounting_method | THREADED STUD(S) |
| nominal_thread_size | 0.250 INCHES IN |
| thread_series_designator | UNF |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 THREADED STUD |
| specification/standard_data | 53711-5498177 MANUFACTURERS SPECIFICATION CONTROL |
| voltage_rating_in_volts_per_characteristic | 720.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 790.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS |
| NSN | 5961-01-355-0503 |
| OVERALL HEIGHT | 1.750 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 720.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 790.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | THREADED STUD(S) |
| OVERALL LENGTH | 3.500 INCHES NOMINAL IN |
| OVERALL WIDTH | 3.000 INCHES NOMINAL IN |
| NOMINAL THREAD SIZE | 0.250 INCHES IN |
| SPECIFICATION/STANDARD DATA | 53711-5498177 MANUFACTURERS SPECIFICATION CONTROL |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | CERAMIC ENCLOSURE |