GS810HU1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

GS810HU1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-044-2652, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

GS810HU1

NSN: 5961-01-044-2652
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 26512 — NORTHROP GRUMMAN SYSTEMS CORPORATION (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	350.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-044-2652

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.130 INCHES MINIMUM AND 0.145 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	350.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

5M3.6ZS1Reference document

Same NSN cross-reference

Reference document — Secondary reference

5M3-6251Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is GS810HU1?

GS810HU1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace GS810HU1?

There are 2 known substitutes for GS810HU1: 5M3.6ZS1, 5M3-6251. Substitute compatibility should be verified for your specific system.

What is the NSN for GS810HU1?

GS810HU1 is cataloged in the U.S. Government catalog under NSN 5961-01-044-2652. This indicates validated use in U.S. government and defense supply chains.

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GS810HU1 — SEMICONDUCTOR DEVICE,DIODE

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