GS810DR1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

GS810DR1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.172 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.078 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-710-2771, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

GS810DR1

NSN: 5961-00-710-2771
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 26512 — NORTHROP GRUMMAN SYSTEMS CORPORATION (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.172 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.078 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
current_rating_per_characteristic	5.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	100.0 CELSIUS JUNCTION DEGC
NSN	5961-00-710-2771

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.078 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.078 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.172 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	5.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE

SUBSTITUTES & CROSS-REFERENCES 1

HD5000Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is GS810DR1?

GS810DR1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace GS810DR1?

There is 1 known substitute for GS810DR1: HD5000. Substitute compatibility should be verified for your specific system.

What is the NSN for GS810DR1?

GS810DR1 is cataloged in the U.S. Government catalog under NSN 5961-00-710-2771. This indicates validated use in U.S. government and defense supply chains.

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GS810DR1 — SEMICONDUCTOR DEVICE,DIODE

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