GIBB103 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

GIBB103: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.460 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.610 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-084-3002, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

GIBB103

NSN: 5961-01-084-3002
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 21845 — SOLITRON DEVICES, INC. (USA)

SPECIFICATIONS

overall_length	0.460 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.610 INCHES MAXIMUM IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
internal_configuration	JUNCTION CONTACT-DARLINGTON CONNECTED
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.687 INCHES MAXIMUM IN
terminal_type_and_quantity	3 TAB, SOLDER LUG
NSN	5961-01-084-3002

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61

•

OVERALL DIAMETER: 0.610 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-61
OVERALL DIAMETER	0.610 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.460 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT-DARLINGTON CONNECTED
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.687 INCHES MAXIMUM IN

SUBSTITUTES & CROSS-REFERENCES 3

928883-1BSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

92-0433Reference document

Same NSN cross-reference

Reference document — Secondary reference

SVT6746BReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is GIBB103?

GIBB103 is a TRANSISTOR.

What parts can replace GIBB103?

There are 3 known substitutes for GIBB103: 928883-1B, 92-0433, SVT6746B. Substitute compatibility should be verified for your specific system.

What is the NSN for GIBB103?

GIBB103 is cataloged in the U.S. Government catalog under NSN 5961-01-084-3002. This indicates validated use in U.S. government and defense supply chains.

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