The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.250 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.150 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-914-9740, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.250 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.150 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| specification/standard_data | 81349-MIL-S-19500/286 GOVERNMENT SPECIFICATION |
| current_rating_per_characteristic | 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| voltage_rating_in_volts_per_characteristic | 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-00-914-9740 |
| MATERIAL | GLASS ENCLOSURE |
| SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/286 GOVERNMENT SPECIFICATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| MATERIAL | SILICON SEMICONDUCTOR |
| MOUNTING METHOD | TERMINAL |
| CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| OVERALL DIAMETER | 0.150 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM IN |