GC16031-36: SEMICONDUCTOR DEVICE SET.
The SEMICONDUCTOR DEVICE SET is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE, overall_width: 0.127 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN, overall_height: 0.105 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN, overall_length: 0.975 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE IN, mounting_method: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE, semiconductor_material: SILICON ALL SEMICONDUCTOR DEVICE DIODE. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-019-4933, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | CERAMIC ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE |
| overall_width | 0.127 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| overall_height | 0.105 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| overall_length | 0.975 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE IN |
| mounting_method | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| semiconductor_material | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| terminal_type_and_quantity | 2 RIBBON ALL SEMICONDUCTOR DEVICE DIODE |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| function_for_which_designed | VOLTAGE VARIABLE CAPACITOR |
| precious_material_and_location | LEADS PLATED GOLD |
| component_function_relationship | MATCHED |
| power_rating_per_characteristic | 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| NSN | 5961-01-019-4933 |
| OVERALL HEIGHT | 0.105 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 95.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE DEGC |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.975 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE IN |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.127 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE IN |
| CAPACITANCE RATING IN PICOFARADS | 6.0 MINIMUM AND 6.7 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |