G504229-2 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

G504229-2: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: PROGRAMMED, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, inclosure_material: CERAMIC, memory_device_type: PROM, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-363-4988, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

G504229-2

NSN: 5962-01-363-4988
FSC: 5962 — Microcircuits, Electronic
CAGE: 3B150 — RAYTHEON COMPANY DBA RAYTHEON CO (USA)

SPECIFICATIONS

features_provided	PROGRAMMED
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
inclosure_material	CERAMIC
memory_device_type	PROM
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
end_item_identification	AN/GPN-22&TPN E/I FSCM 49956
inclosure_configuration	DUAL-IN-LINE
terminal_surface_treatment	SOLDER
specification/standard_data	67268-5962-88518/TX/ GOVERNMENT STANDARD
time_rating_per_chacteristic	30.00 NANOSECONDS NOMINAL ACCESS NS
case_outline_source_and_designator	D-9 MIL-M-38510
NSN	5962-01-363-4988

COMPONENT DIAGRAM

KEY FEATURES

•

INCLOSURE MATERIAL: CERAMIC

•

TERMINAL SURFACE TREATMENT: SOLDER

•

FEATURES PROVIDED: PROGRAMMED

•

INCLOSURE CONFIGURATION: DUAL-IN-LINE

•

MEMORY DEVICE TYPE: PROM

•

CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510

•

SPECIFICATION/STANDARD DATA: 67268-5962-88518/TX/ GOVERNMENT STANDARD

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

INCLOSURE MATERIAL	CERAMIC
TERMINAL SURFACE TREATMENT	SOLDER
FEATURES PROVIDED	PROGRAMMED
INCLOSURE CONFIGURATION	DUAL-IN-LINE
MEMORY DEVICE TYPE	PROM
CASE OUTLINE SOURCE AND DESIGNATOR	D-9 MIL-M-38510
SPECIFICATION/STANDARD DATA	67268-5962-88518/TX/ GOVERNMENT STANDARD
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-0.5 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT

SUBSTITUTES & CROSS-REFERENCES 2

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

5962-8851801LAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is G504229-2?

G504229-2 is a MICROCIRCUIT,MEMORY.

What parts can replace G504229-2?

There are 2 known substitutes for G504229-2: ROM/PROM, 5962-8851801LA. Substitute compatibility should be verified for your specific system.

What is the NSN for G504229-2?

G504229-2 is cataloged in the U.S. Government catalog under NSN 5962-01-363-4988. This indicates validated use in U.S. government and defense supply chains.

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