The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: STEEL COMP 303, end_similarity: IDENTICAL, overall_length: 23.875 INCHES MINIMUM AND 24.125 INCHES MAXIMUM IN, surface_finish: 10.0 MICROINCHES, first_end_style: PLAIN, special_features: EPOXY; 2 IN LONG; 2 IN HT; 300 PIVPER DIODE IN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-135-3516, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | STEEL COMP 303 |
| end_similarity | IDENTICAL |
| overall_length | 23.875 INCHES MINIMUM AND 24.125 INCHES MAXIMUM IN |
| surface_finish | 10.0 MICROINCHES |
| first_end_style | PLAIN |
| special_features | EPOXY; 2 IN LONG; 2 IN HT; 300 PIVPER DIODE IN |
| first_end_diameter | 0.2495 INCHES MINIMUM AND 0.2497 INCHES MAXIMUM IN |
| voltage_rating_in_volts_per_characteristic | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER ALL SEMICONDUCTOR DEVICE DIODE |
| NSN | 5961-00-135-3516 |
| SPECIAL FEATURES | EPOXY; 2 IN LONG; 2 IN HT; 300 PIVPER DIODE IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER ALL SEMICONDUCTOR DEVICE DIODE |