G404518-3: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.630 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 0.240 INCHES NOMINAL IN, lens_transparency: TRANSPARENT, luminous_intensity: 45.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-373-0510, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.630 INCHES MAXIMUM IN |
| mounting_method | PRESS FIT |
| overall_diameter | 0.240 INCHES NOMINAL IN |
| lens_transparency | TRANSPARENT |
| luminous_intensity | 45.0 MILLICANDELA NOMINAL |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | GALLIUM PHOSPHIDE |
| terminal_type_and_quantity | 1 BONDING PAD AND 1 FLANGE |
| color_tone_produced_per_source | RED LENS |
| internal_junction_configuration | PN |
| current_rating_per_characteristic | 60.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| NSN | 5980-01-373-0510 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS |
| OVERALL DIAMETER | 0.240 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM PHOSPHIDE |
| LUMINOUS INTENSITY | 45.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.630 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC |
| LENS TRANSPARENCY | TRANSPARENT |