G12SB12 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

G12SB12: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.520 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), overall_diameter: 1.250 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNP, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-232-3702, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

G12SB12

NSN: 5961-00-232-3702
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 53399 — GPD OPTOELECTRONICS CORP. DIV GPD OPTOELECTRONICS (USA)

SPECIFICATIONS

overall_length	0.520 INCHES NOMINAL IN
mounting_method	THREADED STUD(S)
overall_diameter	1.250 INCHES NOMINAL IN
special_features	JUNCTION PATTERN ARRANGEMENT: PNP
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	GERMANIUM
thread_series_designator	UNF
mounting_facility_quantity	1
terminal_type_and_quantity	2 TAB, SOLDER LUG AND 1 THREADED STUD
power_rating_per_characteristic	50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-00-232-3702

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 1.250 INCHES NOMINAL IN

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: GERMANIUM

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	100.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	1.250 INCHES NOMINAL IN
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	GERMANIUM
OVERALL LENGTH	0.520 INCHES NOMINAL IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
NOMINAL THREAD SIZE	0.190 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

2848-150Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is G12SB12?

G12SB12 is a TRANSISTOR.

What parts can replace G12SB12?

There is 1 known substitute for G12SB12: 2848-150. Substitute compatibility should be verified for your specific system.

What is the NSN for G12SB12?

G12SB12 is cataloged in the U.S. Government catalog under NSN 5961-00-232-3702. This indicates validated use in U.S. government and defense supply chains.

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