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FX1N6159 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

FX1N6159: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: CERAMIC ENCLOSURE, overall_width: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, overall_length: 1.940 INCHES MINIMUM AND 2.785 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, current_rating_per_characteristic: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC, voltage_rating_in_volts_per_characteristic: 45.9 MINIMUM BREAKDOWN VOLTAGE, DC. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-474-3668, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
FX1N6159
NSN: 5961-01-474-3668
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: SH879 — MICROSS CORPUS CHRISTI, S.A. DE C.V. DIV SEMTECH CORPUS CHRISTI CORPORATION (MEX)
SPECIFICATIONS
materialCERAMIC ENCLOSURE
overall_width0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
overall_length1.940 INCHES MINIMUM AND 2.785 INCHES MAXIMUM IN
special_featuresLOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 1500 WATT PEAK PULSE POWER; 7.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
features_providedHERMETICALLY SEALED CASE
current_rating_per_characteristic5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic45.9 MINIMUM BREAKDOWN VOLTAGE, DC
NSN5961-01-474-3668
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN FX1N6159 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.9 MINIMUM BREAKDOWN VOLTAGE, DC
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
•
MATERIAL: CERAMIC ENCLOSURE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC45.9 MINIMUM BREAKDOWN VOLTAGE, DC
OVERALL LENGTH1.940 INCHES MINIMUM AND 2.785 INCHES MAXIMUM IN
OVERALL WIDTH0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
SPECIAL FEATURESLOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 1500 WATT PEAK PULSE POWER; 7.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
MATERIALCERAMIC ENCLOSURE
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is FX1N6159?
FX1N6159 is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for FX1N6159?
FX1N6159 is cataloged in the U.S. Government catalog under NSN 5961-01-474-3668. This indicates validated use in U.S. government and defense supply chains.
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